Word line kicking when sensing non-volatile storage

ABSTRACT

Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.

BACKGROUND

1. Field

This disclosure relates to non-volatile storage.

2. Description of the Related Art

Semiconductor memory has become increasingly popular for use in variouselectronic devices. For example, non-volatile semiconductor memory isused in cellular telephones, digital cameras, personal digitalassistants, mobile computing devices, non-mobile computing devices andother devices. Electrically Erasable Programmable Read Only Memory(EEPROM) and flash memory are among the most popular non-volatilesemiconductor memories. With flash memory, also a type of EEPROM, thecontents of the whole memory array, or of a portion of the memory, canbe erased in one step, in contrast to the traditional, full-featuredEEPROM.

Both traditional EEPROM and flash memory may utilize a floating gatethat is positioned above and insulated from a channel region in asemiconductor substrate. The floating gate is positioned between thesource and drain regions. A control gate is provided over and insulatedfrom the floating gate. The threshold voltage (V_(TH)) of the transistorthus formed is controlled by the amount of charge that is retained onthe floating gate. That is, the minimum amount of voltage that must beapplied to the control gate before the transistor is turned on to permitconduction between its source and drain is controlled by the level ofcharge on the floating gate.

One possibility is to store a single bit in a each memory cell. Allmemory cells in a group may be erased, and then those to receive a “1”may be programmed such that the threshold voltage is above a programverify threshold voltage. The state of a memory cell can later bedetermined by reading the memory cell to determine whether its thresholdvoltage is above or below a read reference threshold voltage. The readreference threshold voltage may be somewhat less than the program verifythreshold voltage to provide a margin of error. It is also possible tostore multiple bits per memory cell by programming a given memory cellto one of a number of possible threshold voltage ranges. For example, ifmemory cells are programmed to one of four threshold voltage ranges,then each memory cell could store two bits. Eight threshold voltageranges might be used to store three bits per memory cell, and so on.

In some architectures there are word lines and bit lines. The word linesmay be used to apply a voltage to the control gates when programming andreading memory cells. For example, during a read operation, a readreference voltage may be applied to the control gates of selected memorycells, and a read pass voltage may be applied to control gates ofunselected memory cells. A bit line that is associated with a givenselected memory cell may be sensed to determine how the selected memorycell responds to application of the read reference voltage. In onetechnique, the selected memory cell will conduct a significant currentif its threshold voltage is less than the read reference voltage.

In one possible approach for reading memory cells that store multiplebits, several read reference voltages of different magnitudes areapplied to the selected word line. Note that there may be a delaybetween the time that a read reference voltage is first applied to theselected word line and the time that the bit line may be sensed. Onereason for this delay is that, for an accurate reading, the voltage onthe selected word line may need to stabilize before the bit lines can besensed. That is, all portions of the selected word line should be at theread reference voltage prior to sensing the bit lines. Because there mayneed to be several read reference voltages of different magnitudes tocomplete the read operation, such delays may impact overall sensingtime. For example, in one approach seven different read referencevoltages are applied to determine which of eight states a memory cell isin. In one approach, 15 different read reference voltages are applied todetermine which of 16 states a memory cell is in.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a NAND string.

FIG. 2 is an equivalent circuit diagram of the NAND string of FIG. 1.

FIG. 3 is a circuit diagram depicting three NAND strings.

FIG. 4 illustrates a non-volatile storage device that may include one ormore memory die or chips.

FIG. 5 depicts an exemplary structure of memory cell array.

FIG. 6 is a block diagram of an individual sense block.

FIG. 7 depicts example threshold voltage distributions for states ofmemory cells in which there are eight states.

FIG. 8 depicts a schematic diagram of a portion of one embodiment of amemory array and associated decoders.

FIG. 9A is an example of voltages on a selected word line during oneembodiment of a read or verify operation in which the kicking voltage isgreater than a target voltage.

FIG. 9B is an example voltage waveform, depicting voltages on a selectedword line during one embodiment of a read or verify operation in whichthe kicking voltage is less than a target voltage.

FIG. 10 is a flowchart of one embodiment of a process of sensing memorycells by applying a kicking voltage to a selected word line.

FIG. 11 is a diagram of one embodiment of a circuit that provides a wordline voltage including a kicking voltage.

FIGS. 12A-12E are an example set of waveforms for the circuit of FIG.11.

FIG. 13 is a flowchart of one embodiment of a process of sensingnon-volatile storage elements, while using a kicking voltage.

FIGS. 14A and 14B are example voltages applied to a selected word lineand unselected word lines during the process of FIG. 13.

FIGS. 15A and 15B are example voltages applied to a selected word lineand unselected word lines during a sense operation.

FIG. 16 is a flowchart of one embodiment of a process of sensingnon-volatile storage elements, while using a kicking voltage that isless than a target reference voltage.

DETAILED DESCRIPTION

Methods and devices for sensing non-volatile storage are disclosed.Technology disclosed herein reduces the time for sensing operations ofnon-volatile storage such as read and program verify. In one embodiment,a kicking voltage is applied to a selected word line during a sensingoperation. The kicking voltage may be applied to one end of a selectedword line during a transition from a first reference voltage to a secondreference voltage. The kicking voltage may help the other end of theword line reach the second reference voltage quickly. Since the bitlines can be sensed after the selected word line has reached the targetreference voltage, the time delay prior to sensing of the bit lines maybe reduced.

Example Memory System and Operation

One example of a memory system suitable for implementing embodimentsuses a NAND flash memory architecture, which includes connectingmultiple transistors in series between two select gates. However, notethat embodiments are not limited to the NAND architecture. Thetransistors connected in series and the select gates are referred to asa NAND string. FIG. 1 is a top view showing one NAND string. FIG. 2 isan equivalent circuit thereof. The NAND string includes fourtransistors, 100, 102, 104 and 106, in series and sandwiched between afirst select gate 120 and a second select gate 122. Select gate 120gates the NAND string connection to bit line 126. Select gate 122 gatesthe NAND string connection to source line 128. Select gate 120 iscontrolled by applying the appropriate voltages to control gate 120CG.Select gate 122 is controlled by applying the appropriate voltages tocontrol gate 122CG. Each of the transistors 100, 102, 104 and 106 has acontrol gate and a floating gate. Transistor 100 has control gate 100CGand floating gate 100FG. Transistor 102 includes control gate 102CG andfloating gate 102FG. Transistor 104 includes control gate 104CG andfloating gate 104FG. Transistor 106 includes a control gate 106CG andfloating gate 106FG. Control gate 100CG is connected to (or is) wordline WL3, (where WL denotes “word line”), control gate 102CG isconnected to WL2, control gate 104CG is connected to WL1, and controlgate 106CG is connected to WL0. In one embodiment, transistors 100, 102,104 and 106 are each storage elements, also referred to as memory cells.In other embodiments, the storage elements may include multipletransistors or may be different than depicted. Select gate 120 isconnected to select line SGD. Select gate 122 is connected to selectline SGS.

FIG. 3 is a circuit diagram depicting three NAND strings. A typicalarchitecture for a flash memory system using a NAND structure willinclude many NAND strings. For example, three NAND strings 320, 340 and360 are shown in a memory array having many more NAND strings. Each ofthe NAND strings includes two select gates and four storage elements.While four storage elements are illustrated for simplicity, NAND stringscan have thirty-two or sixty-four storage elements, for instance.

For example, NAND string 320 includes select gates 322 and 327, andstorage elements 323-326, NAND string 340 includes select gates 342 and347, and storage elements 343-346, NAND string 360 includes select gates362 and 367, and storage elements 363-366. Each NAND string is connectedto the source line by its select gates (e.g., select gates 327, 347 or367). A selection line SGS is used to control the source side selectgates. The various NAND strings 320, 340 and 360 are connected torespective bit lines 321, 341 and 361, by select transistors in theselect gates 322, 342, 362, and so forth. These select transistors arecontrolled by a drain select line SGD. In other embodiments, the selectlines do not necessarily need to be in common among the NAND strings;that is, different select lines can be provided for different NANDstrings. WL3 is connected to the control gates for storage elements 323,343 and 363. WL2 is connected to the control gates for storage elements324, 344 and 364. WL1 is connected to the control gates for storageelements 325, 345 and 365. WL0 is connected to the control gates forstorage elements 326, 346 and 366. As can be seen, each bit line and therespective NAND string comprise the columns of the array or set ofstorage elements. The word lines (WL3, WL2, WL1 and WL0) comprise therows of the array or set. Each word line connects the control gates ofeach storage element in the row. Or, the control gates may be providedby the word lines themselves. For example, WL2 provides the controlgates for storage elements 324, 344 and 364. In practice, there can bethousands of storage elements on a word line.

Each storage element can store data. For example, when storing one bitof digital data, the range of possible threshold voltages (V_(TH)) ofthe storage element is divided into two ranges which are assignedlogical data “1” and “0.” In one example of a NAND type flash memory,the V_(TH) is negative after the storage element is erased, and definedas logic “1.” The V_(TH) after a program operation is positive anddefined as logic “0.” When the V_(TH) is negative and a read isattempted, the storage element will turn on to indicate logic “1” isbeing stored. When the V_(TH) is positive and a read operation isattempted, the storage element will not turn on, which indicates thatlogic “0” is stored. A storage element can also store multiple levels ofinformation, for example, multiple bits of digital data. In this case,the range of V_(TH) value is divided into the number of levels of data.For example, if four levels of information are stored, there will befour V_(TH) ranges assigned to the data values “11”, “10”, “01”, and“00.” In one example of a NAND type memory, the V_(TH) after an eraseoperation is negative and defined as “11”. Positive V_(TH) values areused for the states of “10”, “01”, and “00.” The specific relationshipbetween the data programmed into the storage element and the thresholdvoltage ranges of the storage element depends upon the data encodingscheme adopted for the storage elements.

When programming a flash storage element, a program voltage may beapplied to the control gate of the storage element, and the bit lineassociated with the storage element may be grounded. Electrons from thechannel are injected into the floating gate. When electrons accumulatein the floating gate, the floating gate becomes negatively charged andthe V_(TH) of the storage element is raised. To apply the programvoltage to the control gate of the storage element being programmed,that program voltage is applied on the appropriate word line. Asdiscussed above, one storage element in each of the NAND strings sharethe same word line. For example, when programming storage element 324 ofFIG. 2, the program voltage will also be applied to the control gates ofstorage elements 344 and 364.

FIG. 4 illustrates a non-volatile storage device 210 that may includeone or more memory die or chips 212. Memory die 212 includes an array(two-dimensional or three dimensional) of memory cells 200, controlcircuitry 220, and read/write circuits 230A and 230B. In one embodiment,access to the memory array 200 by the various peripheral circuits isimplemented in a symmetric fashion, on opposite sides of the array, sothat the densities of access lines and circuitry on each side arereduced by half. The read/write circuits 230A and 230B include multiplesense blocks 300 which allow a page of memory cells to be read orprogrammed in parallel. The memory array 200 is addressable by wordlines via row decoders 240A and 240B and by bit lines via columndecoders 242A and 242B. In a typical embodiment, a controller 244 isincluded in the same memory device 210 (e.g., a removable storage cardor package) as the one or more memory die 212. Commands and data aretransferred between the host and controller 244 via lines 232 andbetween the controller and the one or more memory die 212 via lines 234.One implementation can include multiple chips 212.

Control circuitry 220 cooperates with the read/write circuits 230A and230B to perform memory operations on the memory array 200. The controlcircuitry 220 includes a state machine 222, an on-chip address decoder224 and a power control module 226. The state machine 222 provideschip-level control of memory operations. The on-chip address decoder 224provides an address interface to convert between the address that isused by the host or a memory controller to the hardware address used bythe decoders 240A, 240B, 242A, and 242B. The power control module 226controls the power and voltages supplied to the word lines and bit linesduring memory operations. In one embodiment, power control module 226includes one or more charge pumps that can create voltages larger thanthe supply voltage.

In one embodiment, one or any combination of control circuitry 220,power control circuit 226, decoder circuit 224, state machine circuit222, decoder circuit 242A, decoder circuit 242B, decoder circuit 240A,decoder circuit 240B, read/write circuits 230A, read/write circuits230B, and/or controller 244 can be referred to as one or more managingcircuits.

FIG. 5 depicts an exemplary structure of memory cell array 200. In oneembodiment, the array of memory cells is divided into M blocks of memorycells. As is common for flash EEPROM systems, the block is the unit oferase. That is, each block contains the minimum number of memory cellsthat are erased together. Each block is typically divided into a numberof pages. A page is a unit of programming. One or more pages of data aretypically stored in one row of memory cells. A page can store one ormore sectors. A sector includes user data and overhead data. Overheaddata typically includes parity bits of an Error Correction Code (ECC)that have been calculated from the user data of the sector. A portion ofthe controller (described below) calculates the ECC parity when data isbeing programmed into the array, and also checks it when data is beingread from the array. Alternatively, the ECCs and/or other overhead dataare stored in different pages, or even different blocks, than the userdata to which they pertain. A sector of user data is typically 512bytes, corresponding to the size of a sector in magnetic disk drives. Alarge number of pages form a block, anywhere from 8 pages, for example,up to 32, 64, 128 or more pages. Different sized blocks and arrangementscan also be used.

In another embodiment, the bit lines are divided into odd bit lines andeven bit lines. In an odd/even bit line architecture, memory cells alonga common word line and connected to the odd bit lines are programmed atone time, while memory cells along a common word line and connected toeven bit lines are programmed at another time.

FIG. 5 also shows more details of block i of memory array 200. Block iincludes X+1 bit lines and X+1 NAND strings. Block i also includes 64data word lines (WL0-WL63), 2 dummy word lines (WL_d0 and WL_d1), adrain side select line (SGD) and a source side select line (SGS). Oneterminal of each NAND string is connected to a corresponding bit linevia a drain select gate (connected to select line SGD), and anotherterminal is connected to the source line via a source select gate(connected to select line SGS). Because there are sixty four data wordlines and two dummy word lines, each NAND string includes sixty fourdata memory cells and two dummy memory cells. In other embodiments, theNAND strings can have more or fewer than 64 data memory cells and moreor fewer dummy memory cells. Data memory cells can store user or systemdata. Dummy memory cells are typically not used to store user or systemdata. Some embodiments do not include dummy memory cells.

FIG. 6 is a block diagram of an individual sense block 300 partitionedinto a core portion, referred to as a sense module 480, and a commonportion 490. In one embodiment, there will be a separate sense module480 for each bit line and one common portion 490 for a set of multiplesense modules 480. In one example, a sense block will include one commonportion 490 and eight sense modules 480. Each of the sense modules in agroup will communicate with the associated common portion via a data bus472. For further details, refer to U.S. Patent Application Publication2006/0140007, filed Dec. 29, 2004, and titled, “Non-volatile memory andmethod with shared processing for an aggregate of read/write circuits,”which is herby incorporated herein by reference in its entirety.

Sense module 480 comprises sense circuitry 470 that determines whether aconduction current in a connected bit line is above or below apredetermined threshold level. In some embodiments, sense module 480includes a circuit commonly referred to as a sense amplifier. Sensemodule 480 also includes a bit line latch 482 that is used to set avoltage condition on the connected bit line. For example, apredetermined state latched in bit line latch 482 will result in theconnected bit line being pulled to a state designating program inhibit(e.g., Vdd).

Common portion 490 comprises a processor 492, a set of data latches 494and an I/O Interface 496 coupled between the set of data latches 494 anddata bus 471. Processor 492 performs computations. For example, one ofits functions is to determine the data stored in the sensed memory celland store the determined data in the set of data latches. The set ofdata latches 494 is used to store data bits determined by processor 492during a read operation. It is also used to store data bits importedfrom the data bus 471 during a program operation. The imported data bitsrepresent write data meant to be programmed into the memory. I/Ointerface 496 provides an interface between data latches 494 and thedata bus 471.

During read or sensing, the operation of the system is under the controlof state machine 222 that controls the supply of different control gatevoltages to the addressed cell. As it steps through the variouspredefined control gate voltages corresponding to the various memorystates supported by the memory, the sense module 480 may trip at one ofthese voltages and an output will be provided from sense module 480 toprocessor 492 via bus 472. At that point, processor 492 determines theresultant memory state by consideration of the tripping event(s) of thesense module and the information about the applied control gate voltagefrom the state machine via input lines 493. It then computes a binaryencoding for the memory state and stores the resultant data bits intodata latches 494. In another embodiment of the core portion, bit linelatch 482 serves double duty, both as a latch for latching the output ofthe sense module 480 and also as a bit line latch as described above.

It is anticipated that some implementations will include multipleprocessors 492. In one embodiment, each processor 492 will include anoutput line (not depicted in FIG. 6) such that each of the output linesis wired-OR'd together. In some embodiments, the output lines areinverted prior to being connected to the wired-OR line. Thisconfiguration enables a quick determination during the programverification process of when the programming process has completedbecause the state machine receiving the wired-OR line can determine whenall bits being programmed have reached the desired level. For example,when each bit has reached its desired level, a logic zero for that bitwill be sent to the wired-OR line (or a data one is inverted). When allbits output a data 0 (or a data one inverted), then the state machineknows to terminate the programming process. In embodiments where eachprocessor communicates with eight sense modules, the state machine may(in some embodiments) need to read the wired-OR line eight times, orlogic is added to processor 492 to accumulate the results of theassociated bit lines such that the state machine need only read thewired-OR line one time.

During program or verify, the data to be programmed is stored in the setof data latches 494 from the data bus 471. The program operation, underthe control of the state machine, comprises a series of programmingvoltage pulses (with increasing magnitudes) applied to the control gatesof the addressed memory cells. Each programming pulse may be followed bya verify process to determine if the memory cell has been programmed tothe desired state. Processor 492 monitors the verified memory staterelative to the desired memory state. When the two are in agreement,processor 492 may set the bit line latch 482 so as to cause the bit lineto be pulled to a state designating program inhibit. This inhibits thecell coupled to the bit line from further programming even if it issubjected to programming pulses on its control gate. In otherembodiments the processor initially loads the bit line latch 482 and thesense circuitry sets it to an inhibit value during the verify process.

Data latch stack 494 contains a stack of data latches corresponding tothe sense module. In one embodiment, there are 3-5 (or another number)data latches per sense module 480. In one embodiment, the latches areeach one bit. In some implementations (but not required), the datalatches are implemented as a shift register so that the parallel datastored therein is converted to serial data for data bus 471, and viceversa. In one embodiment, all the data latches corresponding to theread/write block of m memory cells can be linked together to form ablock shift register so that a block of data can be input or output byserial transfer. In particular, the bank of read/write modules isadapted so that each of its set of data latches will shift data in to orout of the data bus in sequence as if they are part of a shift registerfor the entire read/write block.

Additional information about the read operations and sense amplifierscan be found in (1) U.S. Pat. No. 7,196,931, “Non-Volatile Memory AndMethod With Reduced Source Line Bias Errors,”; (2) U.S. Pat. No.7,023,736, “Non-Volatile Memory And Method with Improved Sensing,”; (3)U.S. Patent Application Pub. No. 2005/0169082; (4) U.S. Pat. No.7,196,928, “Compensating for Coupling During Read Operations ofNon-Volatile Memory,” and (5) United States Patent Application Pub. No.2006/0158947, “Reference Sense Amplifier For Non-Volatile Memory,”published on Jul. 20, 2006. All five of the immediately above-listedpatent documents are incorporated herein by reference in their entirety.

At the end of a successful programming process (with verification), thethreshold voltages of the memory cells should be within one or moredistributions of threshold voltages for programmed memory cells orwithin a distribution of threshold voltages for erased memory cells, asappropriate. FIG. 7 depicts example threshold voltage distributions forstates of memory cells in which there are eight states. The eight datastates include an erase state and states A-G. In this example, threebits may be stored per memory cell. Between each of the data states areread reference voltages used for reading data from memory cells. Forexample, FIG. 7 shows read reference voltage Vra between data stateserase and A, and Vrb between data states A and B. By testing whether thethreshold voltage of a given memory cell is above or below therespective read reference voltages, the system can determine what statethe memory cell is in. At or near the lower edge of each data state areverify reference voltages. For example, FIG. 7 shows VvA for state A andVvB for state B, etc. When programming memory cells to a given state,the system will test whether those memory cells have a threshold voltagegreater than or equal to the verify reference voltage.

Embodiments disclosed herein include methods and devices for applying akicking voltage to a word line during memory cell sensing operations,such as read or program verify. As one example, when applying verifyreference voltages such as VvA . . . VvG, a kicking voltage is used. Asone example, when applying read reference voltages such as VrA . . .VrG, a kicking voltage is used. The kicking voltage may help the voltageon the selected word line to reach the target reference voltage quickly.Therefore, sensing time during read or program verify may be reduced.

FIG. 8 depicts a schematic diagram of a portion of one embodiment of amemory array 200 and associated row decoders 240A. FIG. 8 provides moredetails of one embodiment of the memory array 200 and associated rowdecoders 240A of FIG. 4. The memory array has blocks 802(0)-802(n). Twoblocks are depicted in FIG. 8, although there typically may be many moreblocks 802. The word lines (WL0 . . . WLn) in a block 802 are modeled ashaving some resistance and some capacitance. The row decoders 240Ainclude a block select transistor connected 804 to each word line. Thevoltage VreadH is applied to each block select transistor 804 in block802(n) to select that block 802(n). The voltage Vss is applied to eachblock select transistor 804 in other blocks (e.g., block 802(0)), suchthat that other blocks are un-selected. Typically, there is one selectedblock and many unselected blocks. There may be one word line voltagetransistor 806(0)-806(n) coupled to each word line. For example,transistor 806(0) is coupled to WL0 of each block 802 through one of theword line select transistors 804. Likewise, transistor 806(n) is coupledto WLn of each block 802 through one of the word line select transistors804. Note that a given word line voltage transistor 806 may be shared bydifferent blocks. For example, if there are 64 word lines per block,there may be 64 word line voltage transistors 806.

A reference voltage (Vcgrv) is applied to word line voltage transistor806(n) in order to apply Vcgrv to the selected word line (WLn) of theselected block 802(n). A read pass voltage (Vread) is applied to wordline voltage transistor 806(0) in order to apply Vread to theun-selected word line (WL0) of the selected block 802(n). The voltageVread may also be applied to other word line voltage transistors (notdepicted in FIG. 8) in order to apply Vread to other un-selected wordlines of the selected block 802(n). Because Vss is applied to the blockselect transistors 804 in the non-selected blocks, the voltages Vcgrvand Vread do not pass to the word lines in the un-selected blocks. Notethat other configurations could be used to provide the voltages to theword lines.

Because there is some resistance and some capacitance associated withthe word lines (both selected and un-selected), the voltages that areapplied to the word lines take some time to propagate to the far end ofthe word lines. In other words, there is an RC time constant associatedwith a word line. Note that a word line may have many memory cellsassociated with it. For example, there may be thousands, tens ofthousands or even more memory cells associated with a single word line.In some cases, bit lines of memory cells along the entire word line maybe sensed during a sensing operation. For example, all memory cells on aword line might be sensed together, or every other memory cell might besensed together. Even if fewer memory cells are being sensed, theselected word line voltage should be at its target reference voltagelevel before sensing the selected memory cell.

Note that in some embodiments, the resistance of the control linesoutside of the memory array 200 may be lower than the resistance of theword lines. Also, the control lines may, in some cases, be spacedfurther apart than word lines in the memory array 200 are spaced.Therefore, capacitive coupling between control lines outside the memoryarray 200 may be less than for word lines. Due to this lower resistanceand/or the lower capacitive coupling, the RC time constant for thecontrol lines may be lower than that of the word lines. Thus, the signalpropagation delay along the control lines may be less of a problem thanthe delay along word lines.

FIG. 9A is an example voltage waveform 900, depicting voltages on theselected word line during one embodiment of a read or verify operation.The waveform 900 depicts the voltage applied to one end of the selectedword line (solid portion) and the voltage at the far end of the selectedword line (dashed portion) when it is significantly different from thenear end. For a portion of the time (e.g., prior to T1; between T3 andT4; and after T6), the voltage at each end of the word line is about thesame). However, for some time periods (e.g., between T1 and T3, as wellas between T4 and T6), the voltage at the far end is different from thenear end. The difference in voltage may be due, at least in part, tosignal propagation delay. The near end refers to the end of the wordline near the block select transistors 804. In other words, the near endrefers to the end of the selected word line at which the referencevoltage is applied.

In this example, the waveform 900 has plateaus at Vcgrv1, Vcgrv2, andVcgrv3, which may be three reference voltages. A kicking voltage may beused during the transition between Vcgrv1 and Vcgrv2. Likewise, kickingvoltage may be used during the transition between Vcgrv2 and Vcgrv3. Thekicking voltage may help the voltage at the far end of the word linereach the target reference voltage more quickly. The kicking voltage maybe either higher or lower than the target reference voltage. In general,if the target reference voltage is greater than the present word linevoltage, then the kicking voltage may be greater than the targetreference voltage. On the other hand, if the target reference voltage isless than the present word line voltage, then the kicking voltage may beless than the target reference voltage. In the example of FIG. 9A, thekicking voltage is greater than the target reference voltage. Forexample, the kicking voltage is dVkick greater than the target referencevoltage (e.g., Vcgrv2). Likewise, the kicking voltage used in thetransition between Vcgrv2 and Vcgrv3 is greater than the targetreference voltage (Vcgrv3). Note that it is not required that thekicking voltage have the same magnitude during each transition.

As represented by the solid line 900(a), the voltage that is applied tothe near end of the selected word line ramps up between time T1 untiltime T2, in this example. At time T2, the voltage that is applied to thenear end of the selected word line is equal to the final target voltage(Vcgrv2) plus a kicking voltage “dVkick”. Then, the voltage ramps downbetween T2 and T3. Thus, the waveform 900(a) for the near end of theword line goes from Vcgrv1 at time T1, to a voltage that is higher thanVcgrv2 at time T2. Then, the waveform 900(a) goes down to Vcgrv2 by timeT3. In one embodiment, selected memory cells are read between time T3and T4. A kicking voltage is also applied between the transition betweenVcgrv2 and Vcgrv3.

Note that the voltage at the far end of the word line (dashed line, 900b) does not match the voltage at the near end of the word line (solidline between T1 and T2, 900 a) between times T1 and T3. However, thevoltage 900 b at the far end of the word line ramps up from Vcgrv1 attime T1 to Vcgrv2 at time T3. The voltage 900 a that is applied to thenear end of the word line helps the voltage at the far end 900 b toreach Vcgrv2 faster than if the kicking voltage were not applied.Therefore, the worst case time for the selected word line to transitionfrom Vcgrv1 and Vcgrv2 may be reduced. Similar reasoning applies totransitions between other reference voltages (such as the transitionfrom Vcgrv2 and Vcgrv3). As noted above, the word line may have memorycells all along it. Therefore, the worst case delay may be reduced byapplying the kicking voltage to the selected word line.

Note that FIG. 9A provides an example in which the target referencevoltage is higher than the previous reference voltage. In some cases,the target reference voltage may be lower than the previous referencevoltage. In this case, the kicking voltage may be less than the targetreference voltage. FIG. 9B depicts one embodiment in which the kickingvoltage is less than the target reference voltage. FIG. 9B shows oneembodiment of a waveform 950 of voltages on a selected word line duringa sensing operation. The waveform 950 depicts the voltage applied to oneend of the selected word line (solid portion) and the voltage at the farend of the selected word line (dashed portion) when it is significantlydifferent from the near end.

In this example, the waveform 950 has plateaus at Vcgrv1, Vcgrv2, andVcgrv3, which may be three reference voltages. A kicking voltage may beused during the transition between Vcgrv1 and Vcgrv2. The kickingvoltage may help the voltage at the far end of the word line reach thetarget reference voltage more quickly. In the example of FIG. 9B, akicking voltage is applied between times T1 and T3. Likewise, a kickingvoltage is used during the transition between Vcgrv2 and Vcgrv3 (betweentimes T4 and T6). Note that the voltage ramps down between time T1 untiltime T2, in this example. At time T2, the voltage that is applied to thenear end of the selected word line is equal to the final targetreference voltage (Vcgrv2) minus a kicking voltage dVkick. Then, thevoltage ramps up between T2 and T3 to reach the target reference voltage(Vcgrv2). Thus, the waveform 950(a) for the near end of the word linegoes from Vcgrv1 at time T1, to a voltage that is lower than Vcgrv2 attime T2. Then, the waveform 950(a) goes up to Vcgrv2 by time T3. In oneembodiment, selected memory cells are read between time T3 and T4.Similar events with respect to the kicking voltage happen between thetransition between Vcgrv2 and Vcgrv3.

Note that for each of FIGS. 9A and 9B, there may be additionaltransitions between reference voltages. For example, referring back toFIG. 7, if there are eight states, then sensing might take place atseven levels (VrA . . . VrG) during a read operation. Thus, there mightbe six transitions. Also, it is not required that the transitions arealways in the same direction. For example, a read sequence might be VrD,VrB, VrE, and possibly then other levels. Note that it is not requiredthat sensing take place at every level. In other words, it is notrequired that all levels VrA through VrG be used.

FIG. 10 is a flowchart of one embodiment of a process 1000 of sensingmemory cells by applying a kicking voltage to a selected word line.Process 1000 describes applying voltages to a selected word line duringa sensing operation such as read or program verify. Process 1000describes applying a voltage to one end of a selected word line, such asthe end near the block select transistors (FIG. 8, 804). Note that thevoltage at the far end of the selected word line may be different fromthe applied voltage, as noted in the discussion of FIGS. 9A and 9B. FIG.10 will be discussed with respect to the example waveforms 900, 950 ofFIGS. 9A and 9B; however, process 1000 is not limited to thosewaveforms.

In step 1002, a first reference voltage is applied to a selected wordline. For example, referring to FIG. 9A, the reference voltage Vcgrv1may be applied to the near end of the selected word line. As anotherexample, referring to FIG. 9B, the reference voltage Vcgrv1 may beapplied to the near end of the selected word line. Referring to FIG. 7,this might correspond to performing a read at one of VrA through VrG ifa read operation is being performed. If a verify operation is beingperformed, one of the levels VvA through VvG might be used.

In step 1004, the first reference voltage applied to the selected wordline is changed to a kicking voltage. For example, referring to FIG. 9A,the voltage applied to the near end of the selected word line is changedfrom Vcgrv1 at time T1 to the voltage Vcgrv2+dVkick. It may take sometime for the voltage to ramp up from Vcgrv1 to Vcgrv2+dVkick. Thus, bychanging the voltage applied to the selected word line does not meanthat an instantaneous change is required. As another example, referringto FIG. 9B, the voltage applied to the near end of the selected wordline is changed from Vcgrv1 at time T1 to the voltage Vcgrv2−dVkick.

In step 1006, the kicking voltage being applied to the selected wordline is changed to a second reference voltage. For example, referring toFIG. 9A, the voltage applied to the near end of the selected word lineis changed from Vcgrv2+dVkick at time T2 to the voltage Vcgrv2 at timeT3. It may take some time for the voltage to ramp down fromVcgrv2+dVkick to Vcgrv2. Thus, by changing the kicking voltage appliedthe second reference voltage does not mean that an instantaneous changeis required. As another example, referring to FIG. 9B, the voltageapplied to the near end of the selected word line is changed fromVcgrv2−dVkick at time T2 to the voltage Vcgrv2 at time T3.

Together steps 1004 and 1006 may be considered to be transitioning fromthe first reference voltage to the second reference voltage. Referringagain to FIG. 9A, the voltage at the far end of the selected word linemay transition from the first reference voltage to the second referencevoltage between times T1 and T3. However, the voltage at the far enddoes not necessarily go above the second reference voltage. In somecases, there may be some overshoot of the voltage at the far end of theselected word line. In some embodiments, the shape of the voltagewaveform that is applied to the near end of the selected word line(e.g., the kicking voltage) is designed to prevent or reduce the amountby which the voltage at the far end of the selected word line exceeds(overshoots) the second reference voltages.

FIG. 11 is a diagram of one embodiment of a circuit 1100 that provides aword line voltage including a kicking voltage. The circuit 1100 may beused to provide a reference voltage during a program verify or readoperation. The circuit 1100 may be used to produce an output voltagesuch as the solid portion of the example waveform 900 depicted in FIG.9A. The circuit 1100 inputs a voltage (CGRV) at input 1101 and outputs avoltage Vcgrv at output 1103. Output voltage Vcgrv may be applied to thenear end of a word line. For example, it may be applied to a selectedword line during a read or program verify operation. Thus, as oneexample, the output voltage Vcgrv may be similar to the solid portion ofthe waveform 900 applied of FIG. 9A. Referring to FIG. 8, the circuit1100 may provide the voltage Vcgrv. In one embodiment, circuit 1100resides in control circuitry 220 of FIG. 4.

In general, the circuit 1100 may work as follows. The input signal CGRVis applied to the non-inverting input of the operational amplifier (opamp) 1102 and is also provided to the circuit output 1103 via switch 1(Sw1). When switch 1 is closed, switch 2 (Sw2) may be open. Likewise,when switch 2 is closed, switch 1 may be open. Therefore, the output1103 may either be coupled to the input 1101 or to the output of theoperational amplifier 1102. The signal KICK is applied to the transistor1104 to control whether resistor R3 is coupled between resistor R2 andground, or whether resistor R2 is coupled to ground without R3. Thiscontrols the output operational amplifier 1102. When KICK is active(such that resistor R3 is not between R2 and ground) the output of theop amp 1102 is driven to a kicking voltage. In some embodiments,resistor R3 is very large relative to the other resistors R1, R2, suchthat when R3 is between R2 and ground, the output of the op amp 1102 isdriven to very close to the input signal CGRV. Further details of arediscussed below.

FIGS. 12A-12E are an example set of waveforms for the circuit 1100 ofFIG. 11. FIG. 12A shows the input signal of the circuit 1100. FIG. 12Bshows whether switch 1 is open (low) or closed (high). FIG. 12C showswhether switch 2 is open (low) or closed (high). FIG. 12D shows the KICKsignal. FIG. 12E shows the output of the circuit 1100. The time periodsin FIGS. 12A-12E do not necessarily correspond to those in FIG. 9A.

In general, the circuit input signal (FIG. 12A) starts at a firstreference voltage (Vcgrv1) and transitions to a second reference voltage(Vcgrv2). The first and second reference voltages may correspond tothose of FIG. 9A, as one example. Prior to time t1, the input voltage isat Vcgv1 (e.g., a first reference voltage). Also, switch 1 is closed andswitch 2 is open. Therefore, the circuit's input voltage is coupled tothe circuit output 1103. Prior to time t1, KICK is low (not active).Thus, transistor 1104 may be off such that resistor R3 is coupledbetween resistor R2 and ground. The circuit output 1103 is thereforeVcgrv1 prior to time t1, as depicted in FIG. 12E.

At time t1, switch 1 opens and switch 2 closes. Therefore, the op ampoutput is coupled to the circuit output 1103. At this time, KICK goeshigh (active). Thus, KICK turns on transistor 1104 such that resistor R2is coupled to ground (without R3 between R2 and ground). This results inthe op amp output being driven towards the kicking voltage. Since the opamp output is coupled to the circuit output 1103 at this time, thisresults in the circuit output ramping towards the kicking voltage, asdepicted in FIG. 12E between times t1 and t2. Note that the circuitinput voltage may change from one reference voltage (Vcgrv1) to anotherreference voltage (Vcgrv2) between time t1 and t2.

At time t2, the KICK signal goes low, which turns off transistor 1104.With transistor 1104 off, resistor R3 is coupled between resistor R2 andground. This results in the op amp output being driven towards thecircuit input voltage (which is Vcgrv2 at this time). Since switch 2 isstill closed at this time, the op amp output is still coupled to theoverall circuit output 1103. By time t3, the op amp output has droppedto Vcgrv2. Therefore, the circuit output 1103 ramps down to Vcgrv2between t2 and t3, as depicted in FIG. 12E.

At time t4, switch 1 closes and switch 2 opens. Therefore, the circuitinput signal is coupled to the overall circuit output 1103. Since thecircuit input is Vcgrv2 at this time, the circuit output signal remainsare Vcgrv2.

Further details of operation of circuit 1100 are now described. The opamp output for different time periods may be given by equations 1 and 2:

Op amp output=input*(1+R1/R2), when KICK is high  Eq. 1:

Op amp output=input*(1+R1/(R2+R3), when KICK is low  Eq. 2:

The input refers to the circuit input 1101, which is provided to thenon-inverting input of the op amp 1102. As noted, KICK may be high inorder to ramp the output of the op amp 1102 to the kicking voltage(e.g., between t1 and t2 in FIG. 12).

Between t1 and t2, the output of the op amp 1102 is driven to a voltagethat is (1+R1/R2) greater than the circuit input 1101, as noted byEquation 1. During the initial portion of this interval, the circuitinput 1101 may be Vcgrv1. Thus, the op amp output is initially driventowards Vcgrv1*(1+R1/R2). At some point, during the interval between t1and t2, the signal to circuit input 1101 may change from Vcgrv1 toVcgrv2. This means that the op amp output is driven to Vcgrv2*(1+R1/R2)after the change. In this example, Vcgrv2 is greater than Vcgrv1, so theop amp output continues to increase. The values of R1 and R2 may beselected such that the op amp output reaches Vcgrv2+dVkick.

Between t2 and t3, KICK is off (see FIG. 12D). Therefore, the output ofthe op amp 1102 is driven to a voltage that is (1+R1/(R2+R3) greaterthan the circuit input 1101. The value of R3 may be selected such thatthe op amp output is driven to a value that is very close to itsnon-inverting input (i.e., the overall circuit input). For example, R3may have a very large resistance relative to R1. Since the circuit input1101 is at Vcgrv2 at this time, the op amp output is driven down toabout Vcgrv2 by time t3. At time t4, switch 1 and switch 2 may change tocouple the circuit input 1101 to the circuit output 1103. Therefore, thecircuit output 1103 remains at Vcgrv2.

FIG. 13 is a flowchart of one embodiment of a process 1300 of sensingnon-volatile storage elements, while applying a kicking voltage to aselected word line. Process 1300 may be used during a read or programverify operation. The circuit 1100 of FIG. 11 may be used to provide avoltage for a selected word line during process 1300. However, adifferent circuit might be used. FIGS. 14A and 14B are example voltagesapplied to a selected word line and unselected word lines during theprocess 1300 of FIG. 13.

In step 1302, a read pass voltage (e.g., Vread) is applied to one ormore unselected word lines. A read pass voltage may be a voltage that isexpected to be greater than the threshold voltage of all memory cells,such that any unselected memory cell will turn on and conduct asignificant current. FIG. 14(A) depicts a read pass voltage waveform.

In step 1304, a reference voltage is applied to a selected word line,while maintaining the read pass voltage on the unselected word lines.For example, referring to FIG. 14B, the voltage Vcgrv1 is applied to theselected word line. Note that the waveform in FIG. 14B may be similar tothe one depicted in FIG. 9A.

In step 1306, a condition of at least one non-volatile storage elementassociated with the selected word line is sensed. In one embodiment, acondition of the bit line associated with a selected non-volatilestorage element is sensed. For example, referring to FIG. 5, a conditionof one or more of bitlines BL0-BLX is sensed. Typically, manynon-volatile storage elements are sensed during step 1306. Circuitrysuch as that depicted in FIG. 6 may be used to sense the condition of agiven bit line. Each bit line may have its own sense circuit, or a sensecircuit may be shared by two or more bit lines. For example, even bitlines could be sensed at one time and odd bit lines sensed at anothertime. Therefore, it is not required that each bit line have a dedicatedsense circuit.

In one embodiment, the condition that is detected is whether the currentconducted by the bit line is greater or less than a demarcation current.The demarcation current is associated with a target threshold voltage.If the current is greater than the demarcation current, then theselected non-volatile storage element is determined to have a thresholdvoltage below the target threshold voltage. In one embodiment, the bitline current is used to charge (or discharge) a capacitor in the sensecircuit. The capacitor may be charged (or discharged) for a certainperiod of time, and then the voltage on the capacitor may be compared toa reference level. If the selected non-volatile storage element has athreshold voltage below the target threshold voltage it is expected toconduct a relatively strong current and therefore the bit line currentshould be high. Therefore, the voltage on the capacitor may be examinedto determine whether the selected non-volatile storage element has athreshold voltage above/below the target threshold voltage.

In step 1308, the voltage that is applied to the selected word line isramped up from the first reference voltage to a level that is greaterthan a second reference voltage, while maintaining the read pass voltageto the one or more unselected word lines. For example, referring to FIG.14B, the voltage is ramped from Vcgrv1 to Vcgrv2+dVkick. During thistime, the voltage on the unselected word lines may be maintained atVread.

In step 1310, the voltage applied to the selected word line is rampeddown to the second reference voltage while maintaining the read passvoltage to the one or more unselected word lines. For example, thevoltage is ramped down from Vcgrv2+dVkick to Vcgrv2. During this time,the voltage on the unselected word lines may be maintained at Vread.

In step 1312, a condition of at least one non-volatile storage elementassociated with the selected word line is sensed in response to thesecond reference voltage. During step 1312, the voltage on the selectedword line may be maintained at Vcgrv2 and the voltages on the unselectedword lines may be maintained at Vread. In one embodiment, a condition ofone or more bit lines is sensed during step 1312.

If there are more states to read (or verify), then the process mayreturn to step 1308 to ramp up the voltage applied to the selected wordline. For example, referring to FIG. 14B, the voltage may be ramped upfrom Vcgrv2 to Vcgrv3+dVkick. Then, step 1310 may be repeated, whereinthe voltage is ramped down to Vcgrv3 (target value). Then, step 1312 maybe repeated to sense a condition of at least one selected non-volatilestorage element. The process may continue until all states are sensed.Note that one variation of process 1300 is to modify the process so thatit is suitable for the waveform of FIG. 9B.

FIGS. 15A and 15B depict waveforms for one embodiment of voltagesapplied to a selected word line and unselected word lines during asensing operation, such as read or program verify. In this case, thesecond reference voltage (Vcgrv2) is greater than the first (Vcgrv1).However, the third reference voltage (Vcgrv3) is less than the second.In this case, the first kicking voltage (dVkick1) is greater than thetarget voltage (Vcgrv2). However, the second kicking voltage (dVkick2)is less than the target voltage (Vcgrv3).

Also note that the absolute magnitude of the first kicking voltage(dVkick1) may be greater than the absolute magnitude of the secondkicking voltage (dVkick2). In general, it is not required that thekicking voltage that is used for different transitions have the sameabsolute magnitude. In other words, the amount by which the kickingvoltage overshoots (or undershoots) the target voltage may be differentfor different transitions.

FIG. 16 is a flowchart of one embodiment of a process 1600 of sensing inwhich the target reference voltage is less than the present referencevoltage. Process 1600 may be used to implement the portion of FIG. 15for the transition between Vcgrv2 and Vcgrv3. Prior to process 1600, aprocess such as process 1300 may be used to first establish Vcgrv1 andthen transition to Vcgrv2. Thus, for the sake of illustration, process1600 begins with Vcgrv2 being applied to the selected word line. As oneexample, Vcgrv1 might correspond to VrA and Vcgrv2 might correspond toVrD.

In step 1608, the voltage that is applied to the selected word line isramped down from the second reference voltage (e.g., Vcgrv2) to a levelthat is less than a third reference voltage (e.g., Vcgrv3) whilemaintaining the read pass voltage to the one or more unselected wordlines. For example, referring to FIG. 15B, the voltage is ramped fromVcgrv2 to Vcgrv3−dVkick. During this time, the voltage on the unselectedword lines may be maintained at Vread.

In step 1610, the voltage applied to the selected word line is ramped upto the third reference voltage while maintaining the read pass voltageto the one or more unselected word lines. For example, the voltage isramped up from Vcgrv3−dVkick to Vcgrv3. During this time, the voltage onthe unselected word lines may be maintained at Vread.

In step 1612, a condition of at least one non-volatile storage elementassociated with the selected word line is sensed in response to thesecond reference voltage. During step 1612, the voltage on the selectedword line may be maintained at Vcgrv3 and the voltages on the unselectedword lines may be maintained at Vread. In one embodiment, a condition ofone or more bit lines is sensed during step 1612.

If there are more states to read (or verify), then the process mayreturn to step 1608 to ramp down the voltage applied to the selectedword line, if the next reference voltage level is lower. As analternative, the process may go to step 1308 of process 1300 to ramp upthe voltage applied to the selected word line, if the next referencevoltage level is higher. Note that process 1300 may be modified suchthat after performing step 1312, the process could jump to process 1600if the next reference level is lower.

One embodiment includes a method for operating non-volatile storagecomprising the following. A first reference voltage is applied to aselected word line. The first reference voltage is transitioned to asecond reference voltage. The transitioning may include changing thefirst reference voltage applied to the selected word line to a kickingvoltage, and changing the kicking voltage applied to the selected wordline to the second reference voltage. The kicking voltage may be greaterthan the second reference voltage if the second reference voltage isgreater than the first reference voltage. The kicking voltage may beless than the second reference voltage if the second reference voltageis less than the first reference voltage.

One embodiment includes a method for operating non-volatile storagecomprising the following. A read pass voltage is applied to one or moreunselected word lines. A first reference voltage is applied to aselected word line while applying the read pass voltage to the one ormore unselected word lines. A condition of at least one non-volatilestorage element associated with the selected word line is sensed inresponse to the first reference voltage. The voltage applied to theselected word line is ramped up from the first reference voltage to alevel that is greater than a second reference voltage while maintainingthe read pass voltage to the one or more unselected word lines. Thesecond reference voltage is greater than the first reference voltage.The voltage applied to the selected word line is ramped down to thesecond reference voltage while maintaining the read pass voltage to theone or more unselected word lines. A condition of at least onenon-volatile storage element associated with the selected word line issensed in response to the second reference voltage.

One embodiment includes a circuit comprising a circuit input that inputsa reference voltage and a circuit output. The reference voltagetransitions from a first level to a second level that is higher than thefirst level. The circuit output outputs a signal that is the first levelfor a first period, transitions from the first level to the second levelduring a second period, and is the second level during a third period.The output signal transition includes ramping to a voltage that isgreater than the second level for a first portion of the second periodand decreasing to the second level during a second portion of the secondperiod.

One embodiment includes a non-volatile storage device comprising aplurality of non-volatile storage elements, a plurality of word linesassociated with the plurality of non-volatile storage elements, and oneor more managing circuits in communication with the one or more wordlines. The one or more managing circuits apply a first reference voltageto a selected word line. The one or more managing circuits transitionfrom applying the first reference voltage to applying a second referencevoltage to the selected word line. As part of the transition from thefirst reference voltage to the second reference voltage the one or moremanaging circuits change the first reference voltage applied to theselected word line to a kicking voltage. The kicking voltage is greaterthan the second reference voltage if the second reference voltage isgreater than the first reference voltage. The kicking voltage is lessthan the second reference voltage if the second reference voltage isless than the first reference voltage. The one or more managing circuitschange the kicking voltage applied to the selected word line to thesecond reference voltage.

The foregoing detailed description has been presented for purposes ofillustration and description. It is not intended to be exhaustive or tolimit embodiments to the precise form disclosed. Many modifications andvariations are possible in light of the above teaching. The describedembodiments were chosen in order to best explain the principles andpractical applications, to thereby enable others skilled in the art tobest utilize various embodiments and with various modifications as aresuited to the particular use contemplated. It is intended that the scopebe defined by the claims appended hereto.

1. A method for operating non-volatile storage, the method comprising:applying a first reference voltage to a selected word line;transitioning from the first reference voltage to a second referencevoltage, the transitioning including: changing the first referencevoltage applied to the selected word line to a kicking voltage, thekicking voltage is greater than the second reference voltage if thesecond reference voltage is greater than the first reference voltage,the kicking voltage is less than the second reference voltage if thesecond reference voltage is less than the first reference voltage; andchanging the kicking voltage applied to the selected word line to thesecond reference voltage.
 2. The method of claim 1, wherein the changingthe first reference voltage applied to the selected word line to thekicking voltage includes increasing the voltage applied to the selectedword line from the first reference voltage to the kicking voltage, thechanging the kicking voltage applied to the selected word line to thesecond reference voltage includes decreasing the kicking voltage to thesecond reference voltage.
 3. The method of claim 1, wherein the changingthe first reference voltage applied to the selected word line to thekicking voltage includes decreasing the voltage applied to the selectedword line from the first reference voltage to the kicking voltage, thechanging the kicking voltage applied to the selected word line to thesecond reference voltage includes increasing the kicking voltage to thesecond reference voltage.
 4. The method of claim 1, further comprising:transitioning from the second reference voltage to a third referencevoltage that is greater than the second reference voltage, the kickingvoltage is a first kicking voltage, the transitioning including:increasing the second reference voltage to a second kicking voltage thatis greater than the third reference voltage; and reducing the secondtransition voltage to the third reference voltage.
 5. The method ofclaim 1, further comprising: sensing conditions of non-volatile storageelements associated with the selected word line in response to the firstreference voltage; and sensing conditions of non-volatile storageelements associated with the selected word line in response to thesecond reference voltage.
 6. The method of claim 1, further comprising:maintaining a read pass voltage on unselected word lines whiletransitioning from the first reference voltage to the second referencevoltage.
 7. A method for operating non-volatile storage, the methodcomprising: applying a read pass voltage to one or more unselected wordlines; applying a first reference voltage to a selected word line whileapplying the read pass voltage to the one or more unselected word lines;sensing a condition of at least one non-volatile storage elementassociated with the selected word line in response to the firstreference voltage; ramping up the voltage applied to the selected wordline from the first reference voltage to a level that is greater than asecond reference voltage while maintaining the read pass voltage to theone or more unselected word lines, the second reference voltage isgreater than the first reference voltage; ramping down the voltageapplied to the selected word line to the second reference voltage whilemaintaining the read pass voltage to the one or more unselected wordlines; and sensing a condition of at least one non-volatile storageelement associated with the selected word line in response to the secondreference voltage.
 8. The method of claim 7, further comprising: rampingup the voltage applied to the selected word line from the secondreference voltage to a level that is greater than a third referencevoltage while maintaining the read pass voltage to the one or moreunselected word lines, the third reference voltage is greater than thesecond reference voltage; ramping down the voltage applied to theselected word line to the third reference voltage while maintaining theread pass voltage to the one or more unselected word lines; and sensinga condition of at least one non-volatile storage element associated withthe selected word line in response to the third reference voltage. 9.The method of claim 7, further comprising: ramping down the voltageapplied to the selected word line from the second reference voltage to alevel that is less than a third reference voltage while maintaining theread pass voltage to the one or more unselected word lines, the thirdreference voltage is less than the second reference voltage; ramping upthe voltage applied to the selected word line to the third referencevoltage while maintaining the read pass voltage to the one or moreunselected word lines; and sensing a condition of at least onenon-volatile storage element associated with the selected word line inresponse to the third reference voltage.
 10. A circuit comprising: acircuit input that inputs a reference voltage, the reference voltagetransitions from a first level to a second level that is higher than thefirst level; and a circuit output that outputs a signal that is thefirst level for a first period, transitions from the first level to thesecond level during a second period, and is the second level during athird period, the output signal transition includes ramping to a voltagethat is greater than the second level for a first portion of the secondperiod and decreasing to the second level during a second portion of thesecond period.
 11. The circuit of claim 10, wherein the circuit includesan amplifier that inputs the reference voltage, the amplifier has anoutput that ramps from the reference voltage to a voltage that is anoffset higher than the reference voltage during the first portion of thesecond period.
 12. The circuit of claim 11, wherein the amplifier outputramps down from the offset higher than the reference voltage toapproximately the reference voltage during the second portion of thesecond period.
 13. The circuit of claim 12, wherein the circuit inputs akick signal that controls the ramping of the amplifier output during thefirst portion of the second period.
 14. The circuit of claim 12, whereinthe circuit includes at least one switch that couples the referencevoltage to the circuit output during the first period and the thirdperiod.
 15. The circuit of claim 14, wherein the at least one switchcouples the amplifier output to the circuit output during the secondperiod.
 16. The circuit of claim 10, wherein the circuit is part of anon-volatile storage device having a plurality of non-volatile storageelements and a plurality of word lines associated with the plurality ofnon-volatile storage elements, the output of the circuit is applied to aselected word line during a read or verify operation.
 17. A non-volatilestorage device comprising: a plurality of non-volatile storage elements;a plurality of word lines associated with the plurality of non-volatilestorage elements; and one or more managing circuits in communicationwith the one or more word lines, the one or more managing circuits applya first reference voltage to a selected word line; the one or moremanaging circuits transition from applying the first reference voltageto applying a second reference voltage to the selected word line, aspart of the transition from the first reference voltage to the secondreference voltage the one or more managing circuits change the firstreference voltage applied to the selected word line to a kickingvoltage, the kicking voltage is greater than the second referencevoltage if the second reference voltage is greater than the firstreference voltage, the kicking voltage is less than the second referencevoltage if the second reference voltage is less than the first referencevoltage, the one or more managing circuits change the kicking voltageapplied to the selected word line to the second reference voltage. 18.The non-volatile storage device of claim 17, further comprising: avoltage circuit having an input that inputs a read signal, the readsignal includes the first reference voltage and the second referencevoltage, the voltage circuit having a circuit output that outputs thefirst reference voltage for a first period, transitions from the firstreference voltage to the second reference voltage during a secondperiod, and is the second reference voltage during a third period, theoutput signal transition includes ramping to a kicking voltage that isgreater than the second reference voltage for a first portion of thesecond period and decreasing to the second reference voltage during asecond portion of the second period, the one or more managing circuitsapply the output of the circuit to a selected word line of the pluralityof word lines when reading or verifying non-volatile storage elementsassociated with the selected word line.
 19. The non-volatile storagedevice of claim 18, wherein the circuit includes an amplifier thatinputs the read signal, the amplifier has an output that ramps from theread signal to a voltage that is an offset higher than the read signalduring the first portion of the second period, the read signaltransitions from the first reference signal to the second referencesignal prior to the end of the first portion of the second period. 20.The non-volatile storage device of claim 19, wherein the amplifieroutput ramps down from the offset higher than the read signal toapproximately the read signal during the second portion of the secondperiod.
 21. The non-volatile storage device of claim 20, wherein thecircuit inputs a kick signal that controls the ramping of the amplifieroutput during the first portion of the second period.
 22. Thenon-volatile storage device of claim 20, wherein the circuit includes atleast one switch that couples the read signal to the circuit outputduring the first period and the third period.
 23. The non-volatilestorage device of claim 22, wherein the at least one switch couples theamplifier output to the circuit output during the second period.
 24. Thenon-volatile storage device of claim 17, wherein as a part of changingthe first reference voltage applied to the selected word line to thekicking voltage the one or more managing circuits increase the voltageapplied to the selected word line from the first reference voltage tothe kicking voltage, as a part of the changing the kicking voltageapplied to the selected word line to the second reference voltage theone or more managing circuits decrease the kicking voltage to the secondreference voltage.
 25. The non-volatile storage device of claim 17,wherein as a part of changing the first reference voltage applied to theselected word line to the kicking voltage the one or more managingcircuits decrease the voltage applied to the selected word line from thefirst reference voltage to the kicking voltage, as a part of thechanging the kicking voltage applied to the selected word line to thesecond reference voltage the one or more managing circuits increase thekicking voltage to the second reference voltage.
 26. The non-volatilestorage device of claim 17, wherein the one or more managing circuitssense conditions of non-volatile storage elements associated with theselected word line in response to the first reference voltage, the oneor more managing circuits sense conditions of non-volatile storageelements associated with the selected word line in response to thesecond reference voltage.
 27. The non-volatile storage device of claim17, wherein the one or more managing circuits maintain a read passvoltage on unselected word lines while the one or more managing circuitstransition the voltage applied to the selected word line from the firstreference voltage to the second reference voltage.